aoD9N40 400v,8a n-channel mosfet general description product summary 500v@150 i d (at v gs =10v) 8a r ds(on) (at v gs =10v) <0.8 ? 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering p ur p ose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c power dissipation b v 30 gate-source voltage t c =100c a i d t c =25c 8 5 22 the aoD9N40 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac - dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability th is device can be adopted quickly into new and existing offline power supply designs. this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 400 pulsed drain current c continuous drain current b mj avalanche current c 150 repetitive avalanche energy c 1 a 3.2 single pulsed avalanche energy h 300 mj v/ns 5 p d maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.7 0.5 1 derate above 25 o c 125 g d s top view to252 dpak bottom view g s d g s d top view to252 dpak bottom view rev0: dec 2010 www.aosmd.com page 1 of 6 pdf create 8 trial www.nuance.com http://
aoD9N40 symbol min typ max units 400 500 bv dss / ? tj 0.4 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.64 0.8 ? g fs 8s v sd 0.75 1 v i s maximum body-diode continuous current 8 a i sm 22 a c iss 500 630 760 pf c oss 45 73 100 pf c rss 2 5.7 9 pf r g 1.2 2.6 4.0 ? q g 10 13.1 16 nc q gs 3.9 nc q gd 4.8 nc t d(on) 17 ns t r 52 ns t d(off) 25 ns t f 30 ns t rr 150 195 240 ns q rr 1.5 1.9 2.3 c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =320v, i d =8a gate source charge gate drain charge i s =1a,v gs =0v v ds =40v, i d =4a v ds =0v, v gs =30v v gs =10v, i d =4a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v i d =250 a v ds =320v, t j =125c zero gate voltage drain current id=250a, vgs=0v i dss zero gate voltage drain current v ds =400v, v gs =0v i f =8a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v drain-source breakdown voltage body diode reverse recovery time static drain-source on-resistance dynamic parameters turn-on rise time forward transconductance v gs =10v, v ds =200v, i d =8a, r g =25 ? gate resistance diode forward voltage reverse transfer capacitance a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) = 150 c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l= 60 mh, i as = 3.2a, v dd =150v, r g =10 ? , starting t j =25c rev0: dec 2010 www.aosmd.com page 2 of 6 pdf create 8 trial www.nuance.com
aoD9N40 typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a ) 25c 125c i d =30a 25c 125c 0 4 8 12 16 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a ) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 24 68 10 v gs (volts) figure 2: transfer characteristics i d (a ) -55c v ds =40v 25c 125c 0.0 0.4 0.8 1.2 1.6 2.0 0 3 6 9 12 15 18 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds ( o n) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature n o r m a liz e d on- r e s is t a nc e v gs =10v i d =4a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv ds s ( n or m a liz e d ) rev0: dec 2010 www.aosmd.com page 3 of 6 pdf create 8 trial www.nuance.com
aoD9N40 typical electrical and thermal characteristic s 0 3 6 9 12 15 04 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (vo l ts ) v ds =320v i d =8a 1 10 100 1000 10000 0.1 1 1 0 100 v ds (volts) figure 8: capacitance characteristics c a pa c i t a nc e ( pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (a m p s ) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limi ted t j(max) =150c t c =25c 100 s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) po w e r (w ) t j(max) =150c t c =25c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc no rmal i z ed t r an si en t t h ermal resi st an ce d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse sin g le puls e t on t p d rev0: dec 2010 www.aosmd.com page 4 of 6 pdf create 8 trial www.nuance.com
aoD9N40 typical electrical and thermal characteristic s 0 30 60 90 120 150 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) p owe r d i s s ipa t ion ( w ) 0 2 4 6 8 10 0 2 5 5 0 75 100 125 150 t case (c) figure 13: current de-rating (note b) curren t rat i n g i d (a ) 0 100 200 300 400 0.01 0.1 1 1 0 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) po w e r (w ) t a =25c 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja no rmal i zed t r an si en t t h e rmal resi st an ce d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: dec 2010 www.aosmd.com page 5 of 6 pdf create 8 trial www.nuance.com
aoD9N40 - + vd c ig vd s dut - + vdc vgs vg s 10v qg qg s q g d char ge g a te c h a r g e t e s t c i r c u i t & w a v e f o r m - + vd c dut vdd vgs vds vg s rl rg vgs vd s 10 % 90% r e s i s t iv e s w it c h in g t e s t c ir c u i t & w a v e f o r m s tt r d( o n ) t on t d( o f f ) t f t of f vd d vg s id vg s rg du t - + vd c l vg s vd s id vg s bv i u n c l am ped i nduc t i v e s w i t c h i ng ( u i s ) t e s t c i r c u i t & w a v e f o rm s ig vg s - + vd c dut l vd s vg s vd s is d is d d i od e r e c o v e r y t e s t c i r c u i t & w a v e f o rm s vd s - vd s + i f ar ds s 2 e = 1 / 2 li di/dt i rm rr vd d vd d q = - idt t rr ar ar rev0: dec 2010 www.aosmd.com page 6 of 6 pdf create 8 trial www.nuance.com
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